DSB60C60PB
preliminary
V = VR
60
Symbol Definition
Ratings
typ. max.
IR
V
IFAV
A
VF
0.78
RthJC
0.85 K/W
min.
30
VRSM
V
10
T = 25°CVJ
T = °CVJ
100
mA
50
V = VR
60
T = 25°CVJ
I = AF
30
V
T = °CC
125
Ptot
145
W
T = 25°CC
RthCH
K/W
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.21
T = 25°CVJ
VF0
V
0.46
T = °CVJ
150
rF
6.9
m?
V
0.69
T = °CVJ
125
I = AF
30
V
0.95
I = AF
60
I = AF
60
threshold voltage
slope resistance
for power loss calculation only
mA
VRRM
V
60
max. repetitive reverse blocking voltage
T = 25°CVJ
CJ
449
junction capacitance
V = VR
12 T = 25°Cf = 1 MHz
VJ
pF
IFSM
t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR
VJ
max. forward surge current
T = °CVJ
150
490
A
rectangular 0.5d =
average forward current
thermal resistance junction to case
thermal resistance case to heatsink
Schottky
60
0.50
IXYS reserves the right to change limits, conditions and dimensions.
20131030a
Data according to IEC 60747and per semiconductor unless otherwise specified
? 2013 IXYS all rights reserved
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